IBM Scientists Achieve Storage Memory Breakthrough
For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell and retaining the information at elevated temperatures using a relatively new memory technology, known as phase-change memory (PCM).
This research breakthrough advances the development of a faster and more durable memory technology for applications including mobile phones, the Internet of Things and enterprise cloud data storage.
Source: IBM Research & ibm.com
Read more: PR Newswire
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